TGAN40N60FD TO-3P

  Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N

   Maximum Power Dissipation: 231 W Maximum Collector-Emitter Voltage: 600 V

   Maximum Gate-Emitter Voltage: 20 VMaximum Collector Current: 80 A @25
    Collector-Emitter saturation Voltage, typ: 1.8 V @25
    Maximum G-E Threshold Voltag: 7.5 V
   Maximum Junction Temperature: 150 
    Rise Time, typ: 75 nS
    Output Capacitance, typ: 125 pFTotal Gate Charge, typ: 115 nC
   Package: TO-3P

TGAN40N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :UPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60FD TO-3PN TGAN40N60FD RoHSAbsolute Maximum Ratings