PMC4996X

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

40V N-Channel MOSFETs PMC4996X General Description These N-Channel enhancemen t mode power field effect transistors a re using trench DMOS techn

PMC4996X