RJP63G4 TO-220F

RJP63G4 - Silicon N-Channel IGBT High Speed ​​Power Switching, 630V, 40A, T-220FP

Type Designator: RJP63G4  Type: IGBT  Type of IGBT Channel: N

Maximum Power Dissipation: 160 W  Maximum Collector-Emitter Voltage: 600 V

Maximum Collector Current: 40 A @25 Collector-Emitter saturation Voltage, typ: 1.8 V @25 Maximum G-E Threshold Voltag: 5 V - Maximum Junction Temperature: 150

Package: TO-220F