SMK0825 TO252

Type Designator: SMK0825D2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 130 W
|Maximum Drain-Source Voltage: 250 V
| Maximum Gate-Source Voltage: 30 V
| Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 8 A
Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
- Rise Time: 85 nS
Output Capacitance: 141 pF
- Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: TO252

SMK0825D2Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATION Features High voltage:

BVDSS=250V (Min.) Low gate charge: Qg=14.5nC (Typ.) D Low drain-source On resistance: RDS(on)=0.43

(Max.) 100% avalanche tested RoHS compliant device Ordering Information G S Part Number Marking Package

D2-PAK SMK0825D2 SMK0825 D2-PAK Marking Informati