JCS7N65SB TO263 original

Type Designator: JCS7N70S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
- Maximum Power Dissipation: 120 W
|- Maximum Drain-Source Voltage: 700 V
| - Maximum Gate-Source Voltage: 30 V
| - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
- Maximum Junction Temperature: 150 °C
- Total Gate Charge: 31 nC
- Rise Time: 35 nS
- Output Capacitance: 125 pF
- Maximum Drain-Source On-State Resistance: 1.6 Ohm