P4004ED TO-252

LCD power MOS P4004ED tube TO-252

Type Designator: P4004ED

   Type of Transistor: MOSFET

   Type of Control Channel: P -Channel

   Pdⓘ - Maximum Power Dissipation: 30 W

   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V

   |Id|ⓘ - Maximum Drain Current: 21 A

   Tjⓘ - Maximum Junction Temperature: 150 °C

   Qgⓘ - Total Gate Charge: 17 nC

   trⓘ - Rise Time: 16 nS

   Cossⓘ - Output Capacitance: 175 pF

   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

   Package: TO252