FDS9933A SOP8 origina

MOSFET – Dual, P-Channel, POWERTRENCH 2.5 V Specified FDS9933A

General Description
These P−Channel 2.5 V specified MOSFETs are produced using

onsemi’s advanced POWERTRENCH process that has been
especially tailored to minimize the on−state resistance and yet
maintain low gate charge for superior switching performance

Features
−3.8 A, −20 V. RDS(on) = 0.075 , VGS = −4.5 V
RDS(on) = 0.105 , VGS = −2.5 V
Low Gate Charge (7 nC Typical )
Fast Switching Speed
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
This Device is Pb−Free and Halide Free