RJK2017 TO-220F

Type Designator: RJK2017
Type of Transistor: MOSFET   Type of Control Channel: N -Channel

Maximum Power Dissipation: 100 W  Maximum Drain-Source Voltage: 200 V  Maximum Gate-Source Voltage: 30 V

Maximum Drain Current: 45 A Maximum Junction Temperature: 150 °C

Rise Time: 40 nS
Output Capacitance: 290 pF
Maximum Drain-Source On-State Resistance: 0.036 Ohm