TR TO-220

P0850ATF P0850 TO220 P0850ATF-VB is a TO220F packaged Single-N-Channel channel MOSFETs.The product features Plannar Technology, with Vds at 650V; Vgs at 30（±V）; and Ida at 10A. P0850ATF-VB MOSFET can be widely used in various electronic devices and systems requiring Single-N-Channel channe...

TYPE : Silicon N Channel IGBT High speed power switching Vces = 360V IC = 35A...

Type Designator: SMK830 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation: 70 W | Maximum Drain-Source Voltage: 500 V | Maximum Gate-Source Voltage: 30 V | Maximum Gate-Threshold Voltage: 4 V | Maximum Drain Current: 4.5 A Maximum Junction Temperature: ...

2N60 TO-220F   he UTC 2N60-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap...

2SC1173 C1173 TO-220...

2SC1507 C1507 TO-220...

2SD1414 D1414 TO-220F...

2SD401A D401A TO220...

2SD612 D612  TO-126...

2SK2717 K2717 N Channel MOS FET Transistor original 2SK2717 K2717 TO220 ORIGINAL Type Designator: 2SK2717 Marking Code: K2717 Type of Transistor: MOSFET Type of Control Channel: N -ChannelMaximum Power Dissipation: 45 W Maximum Drain-Source Voltage: 900 V Maximum Gate-Source Volt...

2SK3525 K3525  600V 6A TO-220 N-channel...

2SK4005-01MR TO-220 original  isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceper...